Doping Effect of Fluorine on Structural and Optical Properties of Zno Nanowires Grown Ny Low Temperature Method

Abstract

Zinc oxide (ZnO) nanowires have attracted considerable attention for optoelectronic, photovoltaic, sensing, and ultraviolet (UV) applications because of their wide direct band gap, high exciton binding energy, optical transparency, and excellent chemical stability. However, their structural and optical properties can be significantly modified through controlled doping. In the present study, fluorine-doped ZnO (F:ZnO) nanowires were synthesized using a low-temperature growth method to investigate the influence of fluorine incorporation on their structural and optical characteristics. Fluorine was introduced as a dopant at different concentrations, and the resulting nanowires were characterized using X-ray diffraction (XRD), scanning electron microscopy (SEM), energy-dispersive X-ray spectroscopy (EDS), UV–Visible spectroscopy, and Fourier-transform infrared spectroscopy (FTIR). XRD analysis confirmed the formation of the hexagonal wurtzite ZnO crystal structure, while changes in diffraction peak intensity and crystallinity indicated the influence of fluorine incorporation on the ZnO lattice. SEM observations revealed the formation of one-dimensional nanowire structures with changes in morphology and dimensions depending on the dopant concentration. EDS analysis confirmed the presence of Zn, O, and F elements, demonstrating successful fluorine incorporation. Optical measurements showed that fluorine doping modified the absorption characteristics and optical band gap of ZnO nanowires. The observed changes were attributed to lattice distortion, defect modification, and carrier concentration effects induced by fluorine doping. Overall, the study demonstrates that low-temperature synthesis combined with fluorine doping provides an effective approach for tailoring the structural and optical properties of ZnO nanowires for potential applications in UV photodetectors, transparent electronics, sensors, and other optoelectronic devices.